Correlation between growth behavior,internal stress distribution and properties of ZnO:Zn crystals grown by carbon-assisted chemical vapor transport

Internal stress and stress-related defects are considered as the major obstacles that significantly hinder the growth of high-quality ZnO-based crystals. In this work, high-crystalline-quality ZnO:Zn bulk crystals were successfully grown by carbon-assisted chemical vapor transport (CVT). Internal stress in the crystal was directly measured by a neutron beam from a reactor, and stress distributions along the radial direction at different depths were obtained. The stress, temperature, and flow fields in the growth system were simulated by the finite element (FE) method, and the results agreed with the neutron stress analysis. The etch pit density (EPD), Hall properties, and optical transmittances of different crystal regions were studied in detail, and the distribution trend of the crystal properties was consistent with that of internal stress and stress-related defects in the crystal. It is found that the unique temperature filed in the growth system causes the crystal to bend to a slightly convex toward the growth direction and gives rise to a driving force for structural defect formation. The + c and –c faces of the crystal are subjected to tensile and compressive stress, respectively. The maximum stress values are about 280 MPa and -291 MPa near the central regions of ±c faces, while the crystal periphery is basically free of internal stress. The region near the center of +c face has an EPD of 7.5 × 10³ cm^-2 and a transmittance of 79.2% at 800 nm wavelength, while the corresponding carrier concentration and mobility are 2.27 × 10¹⁷ cm^?3 and 159 cm²/V·s, respectively. By comparison, the crystal periphery has an EPD of 10² cm^-2 with an 80.5% transmittance at 800 nm, while the carrier concentration and mobility are 1.85 × 10¹⁷ cm^?3 and 184 cm²/V·s, respectively.     

一种可传输轨道角动量的螺旋光子晶体光纤北大核心

设计了一种基于阿基米德螺线的新型螺旋光子晶体光纤,该光纤以二氧化硅为基底材料,包层由24个螺旋臂组成,每个螺旋臂包含11个小空气孔,纤芯设有大空气孔,包层与纤芯中间的环形区域用于传输轨道角动量模式。该结构在1300~1800 nm波段上可支持22种轨道角动量模式稳定传输,在1550 nm波长下,有效折射率差最高可达2.89×10^(-3),色散系数最低可达66.4 ps/(nm·km),非线性系数最低可达2.17 W^(-1)·km^(-1),且1500~1600 nm波段上的色散值变化均小于15.15 ps/(nm·km)。此螺旋光子晶体光纤不仅结构简单,且具有低非线性、色散平坦的性能,为螺旋光子晶体光纤的设计提供了思路。     

Effect of electric field intensity on domain kinetics of Pb(Mg1/3Nb2/3)O3–0.38PbTiO3 single crystal

As one of the outstanding piezoelectric materials, relaxor-PbTiO₃ single crystal also exhibits promising electro-optic and nonlinear-optic properties. Therefore, it is vital to understand the domain switching kinetics not only for optimizing strain-mediated devices performance but also for fabricating optical waveguides and periodic domain structures in optical applications. In this work, domain switching kinetics in annealed and pre-poled PMN-0.38PT single crystal under different external electric field were studied. Polarization reversal can be accomplished only by c-domain nucleation and growth in the annealed sample where the formation of the ferroelastic domains is hindered. In pre-poled sample, 90° domain switching happened by 90° domain wall reorientation under low electric field while 180° domain switching is accomplished by two-step 90° domain switching and c-domain growth under high electric field. The results are important for modulating domain structure for strain mediated and optical devices.     

Role of oxygen in surface kinetics of SiO2 growth on single crystal SiC at elevated temperatures

Understanding surface kinetics of SiO₂ growth on single crystal SiC at elevated temperatures is crucial to fabricate high-performance SiC-based devices. However, the role of oxygen in the evolution mechanism of SiC surface at atomic scale has not been comprehensively elaborated. Here, we reveal the manipulation effect of oxygen on the competitive growth of thermal oxidation SiO₂ (TO-SiO₂) and thermal chemical vapor deposition SiO₂ (TCVD-SiO₂) on the 4H-SiC substrate at 1500 °C. TO-SiO₂ is formed by the thermal oxidation of SiC, in which the substrate undergoes layer-by-layer oxidation, resulting in an atomically flat SiC/TO-SiO₂ interface. TCVD-SiO₂ growth includes the sublimation of Si atoms, the reaction between sublimated Si atoms and reactive oxygen, and the adsorption of gaseous Si_xO_y species. A relatively high sublimation rate of Si atoms at SiC atomic steps causes the transverse evolution of the nucleation sites, leading to the formation of nonuniform micron-sized pits at the SiC/TCVD-SiO₂ interface. The low oxygen concentration favors TCVD-SiO₂ growth, whose crystal quality is much better than that of TO-SiO₂ due to the high surface mobility in the thermal CVD process. We further achieve the epitaxial growth of graphene on 4H-SiC in an almost oxygen-free reaction atmosphere. Additionally, ReaxFF reactive molecular dynamic simulation results illustrate that the decrease in oxygen concentration can promote the growth kinetics of SiO₂ on single crystal SiC from being dominated by thermal oxidation to being dominated by thermal CVD.     

Large third-order optical nonlinearity of ZnO–Bi2O3–B2O3 glass–ceramic containing Bi2ZnB2O7 nanocrystals

Homogeneous transparent optical glass–ceramics precipitated with unique nonlinear crystals are promising materials for photonic applications. We have utilized heat treatment method to prepare transparent ZnO–Bi₂O₃–B₂O₃ glass–ceramic containing Bi₂ZnB₂O₇ nonlinear nanocrystals. A large third-order nonlinear susceptibility χ⁽³⁾ of glass–ceramic is measured by Z-scan technique, which mainly attributed to unique [BiO₆] and [B₂O₅] units in Bi₂ZnB₂O₇ crystal structure and the quantum size effect of nanoparticles. The discovery is of great potential in the application of nonlinear optical integrated devices.     

多水体系单核Mn(Ⅱ)配合物的合成、晶体结构和氢键研究

采用缓慢蒸发溶剂的方法,在去离子水中合成了单核Mn(Ⅱ)配合物[Mn(phen)2(H2O)2]·(H2O)6·SO4(phen=1,10-邻菲罗啉)。利用X射线单晶衍射和元素分析等表征手段确定了其结构和组成。该配合物属于三斜晶系,空间群为P-1。该配合物的中心离子为Mn(Ⅱ),中心离子与两个1,10-邻菲罗啉和两个水分子配位,在晶胞中还有六个未配位的水分子和一个自由的硫酸根离子。配合物中存在多种结构的氢键,包括平面三角形、四面体形、四边形、五边形和六边形。     

液晶材料中间体-4-(反式,反式-4-丙基双环己基)苯乙酮的合成

液晶材料目前的制备方法复杂,市场上成熟的原料合成路线基本没有。要制备性能优异的、使用广泛的液晶材料需要多步反应。以市场中常见的4-(反式,反式-4-丙基双环己基)苯为原料,经傅克酰基化反应得到目标产物。主要考察了4-(反式,反式-4-丙基双环己基)苯乙酮的合成条件,如酰基化反应溶剂、酰基化反应温度、酰基化反应时间及水解反应溶剂四个条件的影响,确定了合成反应的最佳条件。并采用红外光谱和核磁共振方法确证了目标产物。     

聚氨酯防水涂料的发展

聚氨酯涂料因其优异的防水性能,已广泛应用于建筑领域。介绍了我国聚氨酯防水涂料的现状。简单总结了聚氨酯防水涂料组成、分类和今后的发展趋势。     

Standard color liquid crystal displays by a dimming technology

Dimming technologies have been used in liquid crystal display (LCD) products, especially for mobile applications, to reduce power consumption. It is widely known that dimming technologies tend to degrade the color accuracy. This article, however, presents that color performance of a dimmed LCD is better than a conventional one. We show a max method, one of dimming methods, converting an input digital data into higher values that have less color shift phenomenon. We propose how to compare the color performance of original and dimmed colors based on a modified standard. The average value of measured Δu′v′ of 25 dimmed colors was 0.0040, whereas that of the original colors was 0.0190. In addition, the average value of measured Δ of 25 dimmed colors was 2.40, whereas that of the original colors was 9.24. The measured results prove that the dimming technology can make LCD better in not only power consumption but also color performance. This article is the world's first report that breaks the usual stereotype on dimming technologies. This work proposes a dimmed LCD as a standard color display. © 2013 Wiley Periodicals, Inc. Col Res Appl, 39, 480–485, 2014     

噻唑腙1-(1-苯基乙酰基)-2-(噻唑[5,4-b]吡啶基)肼的合成及结构表征

文章从2-氯-3-氨基吡啶出发,经四步反应合成了一个含噻唑的腙类化合物1-(1-苯基乙酰基)-2-(噻唑[5,4-b]吡啶基)肼,并通过红外、核磁及X-射线单晶衍射等表征了该化合物的结构。该化合物的晶体属单斜晶系,P2(1)/c空间群,晶胞参数:a=11.671(8)?,b=9.435(6)?,c=13.120(9)?,β=116.340(6)°,V=1294.7(15)?3,Z=4,Dc=1.377 mg/m3,R1=0.0406。该化合物通过分子间氢键作用形成一维链状结构。